to-92 plastic-encapsulate transistors KTC3202 transistor (npn) features general p urpose application switching a pplication maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics(t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma, i b =0 35 v collector-emitter breakdown voltage v (br)ceo i c = 1ma, i b =0 30 v emitter-base breakdown voltage v (br)ebo i e = 0.1ma, i c =0 5 v collector cut-off current i cbo v cb = 35v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 1v, i c = 100ma 70 400 dc current gain h fe(2) v ce = 6v, i c = 400ma 25 collector-emitter saturation voltage v ce(sat) i c =100ma, i b = 10ma 0.25 v base-emitter saturation voltage v be v ce =1v, i c = 100ma 1.0 v transition frequency f t v ce = 6v, i c = 20ma 300 mhz collector output capacitance c ob v cb = 6v, i e = 0,f=1 mhz 7.0 pf classification of h fe rank o y gr range h fe(1) 70-140 120-240 range h fe(2) 25 40 to-92 1. emitter 2. collector 3. base tiger electronic co.,ltd a,june,2011
|